IRFR9120N Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 9.1507A PRELIMINARY l l l l l l l IRFR/U9120N HEXFET® Power MOSFET D Ultra Low On-Resistance P-Channel Surface Mount (IRFR9120N) Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -100V RDS(on) = 0.48Ω G S ID = -6.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	IRFR9120N
Manufacturer	International Rectifier (now Infineon)
File Size	117.52 KB
Description	Power MOSFET
Datasheet	IRFR9120N IRFU9120N Datasheet (PDF)

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Key Features

R A IN -B1.52 (.060) 1.15 (.045) 3X 2X 1.14 (.045) 0.76 (.030) 2.28 (.090) 4.57 (.180) 0.89 (.035) 0.64 (.025) 0.25 (.010) M A M B 0.58 (.023) 0.46 (.018) N O TE S : 1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 2 C O N TR O LLIN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O JE D E C O U TLIN E TO -252A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O LD E R D IP , S O LD E R D IP M A X. +0.16 (.006). Part Marking Information TO-252AA (D-Pak) E XA M P.

IRFR9120N Distributor

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