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IRFR9120, IRFU9120
Data Sheet July 1999 File Number
3987.4
5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs
These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate-drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17501.
Features
• 5.6A, 100V • rDS(ON) = 0.
IRFR9120 Datasheet
