IRFR9120 Description
IRFR9120, IRFU9120 Data Sheet July 1999 File Number 3987.4 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor...
IRFR9120 Key Features
- 5.6A, 100V
- rDS(ON) = 0.600Ω
- Temperature pensating PSPICE™ Model
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”