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IRFS4321-7PPbF - Power MOSFET

Key Features

  • J , Temperature ( °C ) IRRM - (A) IRFS4321-7PPbF 40 30 20 10 IF = 33A VR = 128V TJ = 125°C TJ = 25°C 0 100 200 300 400 500 600 700 800 900 1000 dif / dt - (A / µs) Fig 16. Threshold Voltage vs. Temperature Fig 17. Typical Recovery Current vs. dif/dt IRRM - (A) 40 30 20 10 IF = 50A VR = 128V TJ = 125°C TJ = 25°C 0 100 200 300 400 500 600 700 800 900 1000 dif / dt - (A / µs) QRR - (nC) 3200 2800 2400 2000 1600 1200 800 IF = 33A VR = 128V 400 TJ = 125°C TJ = 25°C 0 10.

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Other Datasheets by International Rectifier (now Infineon)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Application  Motion Control Applications  High Efficiency Synchronous Rectification in SMPS  Uninterruptible Power Supply  Hard Switched and High Frequency Circuits Benefits  Low Rdson Reduces Losses  Low Gate Charge Improves the Switching Performance  Improved Diode Recovery Improves Switching & EMI Performance  30V Gate Voltage Rating Improves Robustness  Fully Characterized Avalanche SOA IRFS4321-7PPbF   G D S HEXFET® Power MOSFET VDSS RDS(on) typ. max ID 150V 11.7m 14.