IRFU120N Datasheet | International Rectifier

- 91365B IRFR/U120N HEXFET® Power MOSFET l l l l l Surface Mount (IRFR120N) Straight Lead (IRFU120N) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = 100V RDS(on) = 0.21Ω ID = 9.4A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave...