IRFU120Z Datasheet | International Rectifier

Features - Advanced Process Technology - Ultra Low On-Resistance - 175°C Operating Temperature - Fast Switching - Repetitive Avalanche Allowed up to Tjmax - 94754 IRFR120Z IRFU120Z HEXFET® Power MOSFET VDSS = 100V RDS(on) = 190mΩ ID = 8.7A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D-Pak IRFR120Z I-Pak IRFU120Z Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ™ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage d EAS (Thermally limited) Single Pulse Avalanche Energy h EAS (Tested ) Single Pulse Avalanche Energy Tested Value ÙIAR Avalanche Current g EAR Repetitive Avalanche Energy TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC Junction-to-Case i RθJA Junction-to-Ambient (PCB mount) RθJA Junction-to-Ambient HEXFET® is a registered trademark of International Rectifier. .irf. Max. 8.7 6.1 35 35 0.23 ± 20 18 20 See Fig.12a, 12b, 15, 16 -55 to + 175 300 (1.6mm from case ) y y10 lbf in (1.1N...