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IRFU120ZPBF - Power MOSFET

Download the IRFU120ZPBF datasheet PDF. This datasheet also covers the IRFR120ZPBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

Key Features

  • l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFR120ZPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFU120Z N-Channel MOSFET INCHANGE
IRFU120 N-Channel Power MOSFETs Intersil Corporation
IRFU120 Power MOSFET Vishay Siliconix
IRFU120 N-Channel MOSFET INCHANGE
IRFU1205 N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFU120Z AUTOMOTIVE MOSFET
IRFU120 POWER MOSFET
IRFU1205 Power MOSFET
IRFU1205PBF Power MOSFET
IRFU120N Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. PD - 95772B IRFR120ZPbF IRFU120ZPbF HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 190mΩ ID = 8.