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IRFU2605 - Power MOSFET

General Description

Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques that achieve extremely low on-resistance per silicon area and allow electrostatic discharge protection to be integrated in the gate structure.

Key Features

  • LINE TO-252AA. 4.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Previous Datasheet Index Next Data Sheet PD - 9.1253 IRFR2605 IRFU2605 HEXFET® Power MOSFET Ultra Low On-Resistance ESD Protected Surface Mount (IRFR2605) Straight Lead (IRFU2605) 150°C Operating Temperature Repetitive Avalanche Rated Fast Switching Description D VDSS = 55V G RDS(on) = 0.075Ω ID = 19A S Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques that achieve extremely low on-resistance per silicon area and allow electrostatic discharge protection to be integrated in the gate structure. These benefits, combined with the ruggedized device design that HEXFETs are known for, provide the designer with extremely efficient and reliable device for use in a wide variety of applications.