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IRFU2607ZPbF - Power MOSFET

Download the IRFU2607ZPbF datasheet PDF. This datasheet also covers the IRFR2607ZPbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G HEXFET® Power MOSFET D VDSS = 75V RDS(on) = 22mΩ.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFR2607ZPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFU2607Z N-Channel MOSFET INCHANGE
IRFU210 Power MOSFET Vishay Siliconix
IRFU210A Power MOSFET Samsung
IRFU210B 200V N-Channel MOSFET Fairchild Semiconductor
IRFU214 N-Channel Power MOSFETs Intersil Corporation

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFU2607Z AUTOMOTIVE MOSFET
IRFU2605 Power MOSFET
IRFU210 Power MOSFET
IRFU210PBF HEXFET POWER MOSFET
IRFU214 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 95953A IRFR2607ZPbF IRFU2607ZPbF Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G HEXFET® Power MOSFET D VDSS = 75V RDS(on) = 22mΩ Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.