Datasheet Details
| Part number | IRFU3707ZPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 291.76 KB |
| Description | HEXFET Power MOSFET |
| Datasheet |
 IRFU3707ZPBF Datasheet
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Key Features
- s × Vin × f + (Qrr × Vin × f ) ⎝ 2 ⎠.
- dissipated primarily in Q1. Ploss = (Irms 2 × Rds(on ) ) ⎛ Qgd +⎜I × × Vin × ig ⎝ + (Qg × Vg × f ) + ⎛ Qoss × Vin × f ⎞ ⎝ 2 ⎠ ⎞ ⎞ ⎛ Qgs 2 f⎟ + ⎜ I × × Vin × f ⎟ ig ⎠ ⎝ ⎠ This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1.