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IRFU9120NPBF - Power MOSFET

Download the IRFU9120NPBF datasheet PDF. This datasheet also covers the IRFR9120NPBF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Note: The manufacturer provides a single datasheet file (IRFR9120NPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD-95020A IRFR9120NPbF IRFU9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount (IRFR9120N) Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω G S ID = -6.6A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.