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IRFU9120 - P Channel Power MOSFET

Download the IRFU9120 datasheet PDF. This datasheet also covers the IRFR9120 variant, as both devices belong to the same p channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 5.6A, 100V.
  • rDS(ON) = 0.600Ω.
  • Temperature Compensating PSPICE™ Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRFR9120 IRFU9120.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFR9120_Intersil.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRFR9120, IRFU9120 Data Sheet July 1999 File Number 3987.4 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate-drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17501. Features • 5.6A, 100V • rDS(ON) = 0.