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IRFU9120 Datasheet P Channel Power MOSFET

Manufacturer: Intersil (now Renesas)

Overview: IRFR9120, IRFU9120 Data Sheet July 1999 File Number 3987.4 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate-drive power. They can be operated directly from integrated circuits. Formerly developmental type TA17501.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • 5.6A, 100V.
  • rDS(ON) = 0.600Ω.
  • Temperature Compensating PSPICE™ Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRFR9120 IRFU9120.

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