IRFZ24VSPbF Datasheet | International Rectifier

Description .. D2 Pak IRFZ24VS TO-262 IRFZ24VL Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V‡ Continuous Drain Current, VGS @ 10V‡ Pulsed Drain Current ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt - ‡ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 17 12 68 44 0.29 ± 20 17 4.4 4.2 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V A m J V/ns °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient (PCB Mounted)- - Typ. - - - - - - Max. 3.4 40 Units °C/W .irf. 7/16/04 IRFZ24VS/LPb F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy‚‡ Min. 60 - - - - - - 2.0 7.8 - - - - - - -...