IRFZ34S
Description
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
- Part: IRFZ34S
- Description: Power MOSFET
- Category: MOSFET
- Manufacturer: International Rectifier
- Size: 305.44 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| IRFZ34S | Vishay | Power MOSFET |
| IRFZ34 | Samsung Electronics | N-Channel Power MOSFET |
| IRFZ34A | Samsung Electronics | Power MOSFET |
| IRFZ34 | Vishay | Power MOSFET |
| IRFZ30 | Samsung Electronics | N-Channel Power MOSFET |
| IRFZ32 | Motorola Semiconductor | Power Field Effect Transistors |