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IRFZ44VPbF - Power MOSFET

Download the IRFZ44VPbF datasheet PDF. This datasheet also covers the IRFZ44V variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFZ44V_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFZ44V N-Channel MOSFET INCHANGE
IRFZ44VZ N-Channel MOSFET INCHANGE
IRFZ44VZS N-Channel MOSFET INCHANGE
IRFZ44 Power MOSFET Fairchild
IRFZ44 Power MOSFET Vishay

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFZ44V Power MOSFET
IRFZ44VL Power MOSFET
IRFZ44VLPbF HEXFET Power MOSFET
IRFZ44VS Power MOSFET
IRFZ44VSPbF HEXFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Optimized for SMPS Applications l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.