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IRFZ44VZLPbF - Power MOSFET

Download the IRFZ44VZLPbF datasheet PDF. This datasheet also covers the IRFZ44VZPbF variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFZ44VZPbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFZ44VZ N-Channel MOSFET INCHANGE
IRFZ44VZS N-Channel MOSFET INCHANGE
IRFZ44V N-Channel MOSFET INCHANGE
IRFZ44 Power MOSFET Fairchild
IRFZ44 Power MOSFET Vishay

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFZ44VZ Power MOSFET
IRFZ44VZPbF Power MOSFET
IRFZ44VZSPbF Power MOSFET
IRFZ44V Power MOSFET
IRFZ44VL Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.