Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- E R F 530S DAT E CODE YE AR 0 = 2000 WE E K 02 L INE L
OR
INT E R NAT IONAL R E CT IF IE R LOGO AS S E MBL Y L OT CODE P AR T NU MB E R F 530S DAT E CODE P = DE S IGNAT E S L E AD-F R E E P R ODU CT (OPT IONAL ) YE AR 0 = 2000 WE E K 02 A = AS S E MB LY S IT E CODE
8
www. irf. com
Free Datasheet http://www. datasheet4u. com/
IRFZ48VSPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059) 0.368 (.
IRFZ48VSPBF Datasheet
