High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V
Combines low conduction losses with high switching speed
Latest generation design provides tighter parameter distribution and higher efficiency than previous generations
Lead-Free
IRG4BC30KPbF
Short Circuit Rated UltraFast IGBT
C
VCES = 600V
G
E
n-channel
VCE(on) typ. = 2.21V
@VGE = 15V, IC = 16A
Benefits
As a Freewheeling Diode we recommend our.
Full PDF Text Transcription for IRG4BC30KPBF (Reference)
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PD - 95641A INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V Comb...
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or control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed Latest generation design provides tighter parameter distribution and higher efficiency than previous generations Lead-Free IRG4BC30KPbF Short Circuit Rated UltraFast IGBT C VCES = 600V G E n-channel VCE(on) typ. = 2.
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IRG4BC30KPBF Datasheet
