IRG4BC30FPBF - Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR
International Rectifier (now Infineon)
Key Features
Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-220AB package Lead-Free
C
Fast Speed IGBT
VCES = 600V
G E
VCE(on) typ. = 1.59V
@VGE = 15V, IC = 17A
n-channel
Benefits
Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified.
Full PDF Text Transcription for IRG4BC30FPBF (Reference)
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PD -95651 IRG4BC30FPbF INSULATED GATE BIPOLAR TRANSISTOR Features Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode...
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ting frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-220AB package Lead-Free C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A n-channel Benefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs www.DataSheet4U.
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IRG4BC30FPBF Datasheet
