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PD - 94938A
IRG4BC30FDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Fast CoPack IGBT
Features
Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-220AB package Lead-Free
C
G E
n-channel
VCES = 600V VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A
Benefits
Generation -4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with
IGBT's.
IRG4BC30FDPBF Datasheet
