IRG4BC30FD-S Datasheet | International Rectifier

Features • Fast: optimized for medium operating frequencies (1-5 k Hz in hard switching, >20k Hz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations. VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available. • IGBT's optimized for specific application conditions. • HEXFRED diodes optimized for performance with IGBT's. Minimized recovery characteristics require less/no snubbing. • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's. D2Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current Max. 600 31 17 120 120 12 120 ±20 100 42 -55 to +150 Units V A d c Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Operating Junction and Storage Temperature Range V W °C PD @ TC = 100°C Maximum Power Dissipation Thermal / Mechanical Characteristics Parameter RθJC RθCS RθJA Wt Junction-to-Case- IGBT Case-to-Sink, flat, greased surface Weight Junction-to-Ambient (PCB Mounted,steady state) Min. - - - - - - - - - - - - Typ. - - - 0.50 - - - 2.0 (0.07) Max. - - - 40 - - - Units °C/W g g...