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PD - 96929
IRG4BC30FD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
C
Fast CoPack IGBT
VCES = 600V
Features
Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations.
G E
VCE(on) typ. = 1.59V
@VGE = 15V, IC = 17A
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available. IGBT's optimized for specific application conditions. HEXFRED diodes optimized for performance with IGBT's. Minimized recovery characteristics require less/no snubbing.
IRG4BC30FD-S Datasheet
