IRG4BC30FD1 Datasheet | International Rectifier

Features • Fast: optimized for medium operating frequencies (1-5 k Hz in hard switching, >20k Hz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. • IGBT co-packaged with Hyperfast FRED diodes for ultra low recovery characteristics. • Industry standard TO-220AB package. VCES = 600V VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available. • IGBT's optimized for specific application conditions. • FRED diodes optimized for performance with IGBT's. Minimized recovery characteristics require less / no snubbing. TO-220AB .. Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current Max. 600 31 17 120 120 8 16 ±20 100 42 -55 to +150 Units V A d c Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Operating Junction and Storage Temperature Range Storage Temperature Range, for 10 sec. Mounting Torque, 6-32 or M3 Screw PD @ TC = 100°C Maximum Power Dissipation °C 300 (0.063 in. (1.6mm) from case) 10 lbf- in (1.1 N- m) Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case- IGBT Junction-to-Case- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. - - - - - - - - - - - - - - - Typ. - - - - - - 0.50 - - - 2.0 (0.07) Max. 1.2 2.0 -...