Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. IGBT co-packaged with Hyperfast FRED diodes for ultra low recovery characteristics. Industry standard TO-220AB package. G E
VCES = 600V VCE(on) typ. = 1.59V
@VGE = 15V, IC = 17A
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available. IGBT's optimized for s.
Full PDF Text Transcription for IRG4BC30FD1 (Reference)
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PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C Features Fast: optimized for medium operating frequencies (1-5 kHz in h...
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tures Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. IGBT co-packaged with Hyperfast FRED diodes for ultra low recovery characteristics. Industry standard TO-220AB package. G E VCES = 600V VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A n-channel Benefits Generation 4 IGBT's offer highest efficiency available. IGBT's optimized for specific application conditions. FRED diodes optimized for performance with IGBT's. Minimized recovery characteristics require
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IRG4BC30FD1 Datasheet
