IRG4BC30FD Datasheet | International Rectifier

Features - Fast: Optimized for medium operating frequencies ( 1-5 k Hz in hard switching, >20 k Hz in resonant mode). - Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 - IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations - Industry standard TO-220AB package Fast Co Pack IGBT VCES = 600V VCE(on) typ. = 1.59V @VGE = 15V, IC = 17A n-cha nnel Benefits - Generation -4 IGBT's offer highest efficiencies available - IGBT's optimized for specific application conditions - HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing - Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 31 17 120 120 12 120 ± 20 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf- in (1.1 N- m) Units °C Thermal Resistance Parameter Rq JC Rq JC Rq CS Rq JA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ------------------------- Typ. ----------0.50 ----2 (0.07) Max. 1.2 2.5 -----80 ------ Units °C/W g...