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IRG4BC30FD - INSULATED GATE BIPOLAR TRANSISTOR

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International Rectifier

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IRG4BC30FD INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRG4BC30FD

Datasheet Details

Part number	IRG4BC30FD
Manufacturer	International Rectifier
File Size	412.65 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4BC30FD Datasheet
Additional preview pages of the IRG4BC30FD datasheet.

Product details

Features

Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3.
IGBT co-packaged with.

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Published: Jul 27, 2005 |