Datasheet4U Logo Datasheet4U.com

IRG4PC60U - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode.
  • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.
  • Industry standard TO-247AC package. C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.6V @VGE = 15V, IC = 40A n-channel Benefits.
  • Generation 4 IGBT's offer highest efficiency available.
  • IGBT's optimized for specified.

📥 Download Datasheet

Datasheet preview – IRG4PC60U

📁 Similar Datasheet

  • IRG4PC40F - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4PC40FD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4PC40K - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4PC40KD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4PC40S - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4PC40U - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4PC40UD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4PC40W - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
  • IRG4PC50F - Fast Speed IGBT (IRF)
  • IRG4PC50FD - INSULATED GATE BIPOLAR TRANSISTOR (IRF)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com PD - 94443 IRG4PC60U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. • Industry standard TO-247AC package. C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.6V @VGE = 15V, IC = 40A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available. • IGBT's optimized for specified application conditions. • Designed for best performance when used with IR Hexfred & IR Fred companion diodes.
Published: |