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PD - 95568
IRG4PC60UPbF
INSULATED GATE BIPOLAR TRANSISTOR
UltraFast Speed IGBT
Features
UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode.
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency.
Industry standard TO-247AC package. Lead-Free
C
G E
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available. IGBT's optimized for specified application conditions. Designed for best performance when used with IR
Hexfred & IR Fred companion diodes.
VCES = 600V VCE(on) typ. = 1.
IRG4PC60UPBF Datasheet
