IRG7PH46UPbF Description
PD - 96305 INSULATED GATE BIPOLAR TRANSISTOR.
IRG7PH46UPbF Key Features
- Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the pa
IRG7PH46UPbF Applications
- Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
- Rugged transient performance for increased reliability
- Excellent current sharing in parallel operation