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IRG7PH46UPbF Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 96305 INSULATED GATE BIPOLAR TRANSISTOR.

This datasheet includes multiple variants, all published together in a single manufacturer document.

IRG7PH46UPbF datasheet preview

Datasheet Details

Part number	IRG7PH46UPbF
Manufacturer	International Rectifier (now Infineon)
File Size	413.79 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PH46UPbF IRG7PH46U-EP Datasheet (PDF)

Key Features

Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Free C IRG7PH46UPbF IRG7PH46U-EP VCES = 1200V IC = 75A, TC = 100°C G E TJ(max) =175°C n-channel VCE(on) typ. = 1.7V Benefits.
High efficiency in a wide range of.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRG7PH46U-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH46UD-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH46UDPbF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42U-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42U-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UD-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UD1-EP	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UD1MPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UD1PbF	INSULATED GATE BIPOLAR TRANSISTOR
IRG7PH42UDPbF	INSULATED GATE BIPOLAR TRANSISTOR

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