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IRG7SC12FPBF Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 96363 IRG7SC12FPbF INSULATED GATE BIPOLAR TRANSISTOR.

IRG7SC12FPBF datasheet preview

Datasheet Details

Part number	IRG7SC12FPBF
Manufacturer	International Rectifier (now Infineon)
File Size	314.80 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7SC12FPBF_InternationalRectifier.pdf

Key Features

Low VCE (ON) Trench IGBT Technology Maximum Junction temperature 150 °C 3 μS short circuit SOA Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution Lead Free Package C VCES = 600V IC = 8A, TC = 100°C G E tSC ≥ 3μs, TJ(max) = 150°C n-channel VCE(on) typ. = 1.60V C Benefits.
High Efficiency in a HVAC, Refrigerator.

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