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IRG7SC12FPBF - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

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IRG7SC12FPBF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRG7SC12FPBF

Datasheet Details

Part number	IRG7SC12FPBF
Manufacturer	International Rectifier
File Size	314.80 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7SC12FPBF Datasheet
Additional preview pages of the IRG7SC12FPBF datasheet.

IRG7SC12FPBF Product details

Features

Low VCE (ON) Trench IGBT Technology Maximum Junction temperature 150 °C 3 μS short circuit SOA Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution Lead Free Package C VCES = 600V IC = 8A, TC = 100°C G E tSC ≥ 3μs, TJ(max) = 150°C n-channel VCE(on) typ. = 1.60V C Benefits.
High Efficiency in a HVAC, Refrigerator.

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Published: Sep 11, 2012 |