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IRG7SC12FPBF - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Low VCE (ON) Trench IGBT Technology Maximum Junction temperature 150 °C 3 μS short circuit SOA Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution Lead Free Package C VCES = 600V IC = 8A, TC = 100°C G E tSC ≥ 3μs, TJ(max) = 150°C n-channel VCE(on) typ. = 1.60V C Benefits.
  • High Efficiency in a HVAC, Refrigerator.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 96363 IRG7SC12FPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • Low VCE (ON) Trench IGBT Technology Maximum Junction temperature 150 °C 3 μS short circuit SOA Square RBSOA Positive VCE (ON) Temperature co-efficient Tight parameter distribution Lead Free Package C VCES = 600V IC = 8A, TC = 100°C G E tSC ≥ 3μs, TJ(max) = 150°C n-channel VCE(on) typ. = 1.60V C Benefits • • • • High Efficiency in a HVAC, Refrigerator applications Rugged transient Performance for increased reliability Excellent Current sharing in parallel operation Low EMI www.DataSheet.