IRG8P60N120KDPbF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier (now Infineon)

Key Features

Benchmark Low VCE(ON) 10μs Short Circuit SOA Positive VCE(ON) Temperature Coefficient Square RBSOA and high ILM- rating Lead-Free, RoHS compliant Benefits High Efficiency in a Motor Drive.

IRG8P60N120KDPbF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRG8P60N120KDPbF
Manufacturer	International Rectifier (now Infineon)
File Size	671.72 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG8P60N120KDPbF Datasheet

Full PDF Text Transcription for IRG8P60N120KDPbF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRG8P60N120KDPbF. For precise diagrams, and layout, please refer to the original PDF.

VCES = 1200V IC = 60A, TC =100°C IRG8P60N120KDPbF IRG8P60N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC 10µs, TJ(max) = 150°C V...

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tor with Ultrafast Soft Recovery Diode C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.

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