IRGB4B60KD1PBF Description
PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
IRGB4B60KD1PBF Key Features
- Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperatu
- Benchmark Efficiency for Motor Control
- Rugged Transient Performance
- Low EMI