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IRGB4B60KPBF Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

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IRGB4B60KPBF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRGB4B60KPBF
Manufacturer	International Rectifier (now Infineon)
File Size	387.58 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB4B60KPBF Datasheet

Overview

PD - 95643A INSULATED GATE BIPOLAR TRANSISTOR.

Key Features

Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. Lead-Free. C IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF VCES = 600V IC = 6.8A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current.

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