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IRGB4B60KPBF - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

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IRGB4B60KPBF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRGB4B60KPBF

Datasheet Details

Part number	IRGB4B60KPBF
Manufacturer	International Rectifier
File Size	387.58 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB4B60KPBF Datasheet
Additional preview pages of the IRGB4B60KPBF datasheet.

Product details

Features

Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. Lead-Free. C IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF VCES = 600V IC = 6.8A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current.

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Published: Mar 31, 2014 |