Datasheet4U Logo Datasheet4U.com

IRGP35B60PD-EP - SMPS IGBT

Key Features

  • NPT Technology, Positive Temperature Coefficient.
  • Lower VCE(SAT).
  • Lower Parasitic Capacitances.
  • Minimal Tail Current.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRGP35B60PD WARP2 SERIES IGBT IRF
IRGP30B120KD-E INSULATED GATE BIPOLAR TRANSISTOR IRF
IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR IRF
IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR IRF
IRGP20B120UD-E INSULATED GATE BIPOLAR TRANSISTOR IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGP35B60PDPbF SMPS IGBT
IRGP30B120KD-EP INSULATED GATE BIPOLAR TRANSISTOR
IRGP30B60KD-EP INSULATED GATE BIPOLAR TRANSISTOR
IRGP20B120U-EP INSULATED GATE BIPOLAR TRANSISTOR
IRGP20B120UD-EP insulated gate bipolar transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMPS IGBT PD - 96169 IRGP35B60PD-EP WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Applications • Telecom and Server SMPS • PFC and ZVS SMPS Circuits • Uninterruptable Power Supplies • Consumer Electronics Power Supplies • Lead-Free Features • NPT Technology, Positive Temperature Coefficient • Lower VCE(SAT) • Lower Parasitic Capacitances • Minimal Tail Current • HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode • Tighter Distribution of Parameters • Higher Reliability Benefits • Parallel Operation for Higher Current Applications • Lower Conduction Losses and Switching Losses • Higher Switching Frequency up to 150KHz C G E n-channel VCES = 600V VCE(on) typ. = 1.85V @ VGE = 15V IC = 22A Equivalent MOSFET Parameters RCE(on) typ.