IRGP35B60PDPbF
Features
- NPT Technology, Positive Temperature Coefficient
- Lower VCE(SAT)
- Lower Parasitic Capacitances
- Minimal Tail Current
- HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
- Tighter Distribution of Parameters
- Higher Reliability
Benefits
- Parallel Operation for Higher Current Applications
- Lower Conduction Losses and Switching Losses
- Higher Switching Frequency up to 150k Hz
G E n-channel
VCES = 600V VCE(on) typ. = 1.85V @ VGE = 15V IC = 22A Equivalent MOSFET
Parameters RCE(on) typ. = 84mΩ ID (FET equivalent) = 35A
E C G TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFRM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref. Fig. C.T.4) d Clamped Inductive Load Current
Diode Continous Forward Current Diode Continous Forward Current e Maximum Repetitive Forward Current
Gate-to-Emitter Voltage...
