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IRGP4650D-EPBF - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRGP4650D-EPBF datasheet PDF. This datasheet also covers the IRGP4650DPBF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low VCE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5μs short circuit SOA Lead-Free, RoHS compliant Benefits High efficiency in a wide range of.

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Note: The manufacturer provides a single datasheet file (IRGP4650DPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IRGP4650D-EPBF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRGP4650D-EPBF. For precise diagrams, and layout, please refer to the original PDF.

IRGP4650DPbF IRGP4650D-EPbF VCES = 600V IC = 50A, TC = 100°C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE CC C tSC ≥ 5μs, TJ(max) = 175°C VCE(on) ...

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ULTRAFAST SOFT RECOVERY DIODE CC C tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
IRGP4650DPBF INSULATED GATE BIPOLAR TRANSISTOR
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