IRGP4650DPBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier (now Infineon)

Key Features

Low VCE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5μs short circuit SOA Lead-Free, RoHS compliant Benefits High efficiency in a wide range of.

IRGP4650DPBF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRGP4650DPBF
Manufacturer	International Rectifier (now Infineon)
File Size	344.30 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP4650DPBF Datasheet

Full PDF Text Transcription for IRGP4650DPBF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRGP4650DPBF. For precise diagrams, and layout, please refer to the original PDF.

IRGP4650DPbF IRGP4650D-EPbF VCES = 600V IC = 50A, TC = 100°C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE CC C tSC ≥ 5μs, TJ(max) = 175°C VCE(on) ...

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ULTRAFAST SOFT RECOVERY DIODE CC C tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.

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