IRGP4650DPBF - INSULATED GATE BIPOLAR TRANSISTOR

Datasheet Summary

Features

Low VCE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5μs short circuit SOA Lead-Free, RoHS compliant Benefits High efficiency in a wide range of.

International Rectifier

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Datasheet Details

Part number	IRGP4650DPBF
Manufacturer	International Rectifier
File Size	344.30 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP4650DPBF Datasheet
Additional preview pages of the IRGP4650DPBF datasheet.

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Full PDF Text Transcription

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IRGP4650DPbF IRGP4650D-EPbF VCES = 600V IC = 50A, TC = 100°C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE CC C tSC ≥ 5μs, TJ(max) = 175°C VCE(on) typ. = 1.

Published: Mar 8, 2016 |