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IRGPS4067DPBF - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Low VCE (on) Trench IGBT Technology Low Switching Losses 5μs SCSOA Square RBSOA 100% of The Parts Tested for ILM  Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free, RoHS Compliant C IRGPS4067DPbF VCES = 600V IC(Nominal) = 120A G E tSC 5μs, TJ(max) = 175°C n-channel C VCE(on) typ. = 1.70V Benefits.
  • High Efficiency in a Wide Range of.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr PD - 97736 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features          Low VCE (on) Trench IGBT Technology Low Switching Losses 5μs SCSOA Square RBSOA 100% of The Parts Tested for ILM  Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free, RoHS Compliant C IRGPS4067DPbF VCES = 600V IC(Nominal) = 120A G E tSC 5μs, TJ(max) = 175°C n-channel C VCE(on) typ. = 1.