Datasheet Summary
- 96358
INSULATED GATE BIPOLAR TRANSISTOR
Features
- Low VCE (on) Non Punch Through IGBT Technology.
- 10µs Short Circuit Capability.
- Square RBSOA.
- Positive VCE (on) Temperature Coefficient.
- Lead-Free
VCES = 600V IC = 15A, TC=100°C
G E tsc > 10µs, TJ=150°C VCE(on) typ. = 1.8V n-channel
Benefits
- Benchmark Efficiency for Motor Control.
- Rugged Transient Performance.
- Low EMI.
- Excellent Current Sharing in Parallel Operation....