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IRGS15B60KPBF - INSULATED GATE BIPOLAR TRANSISTOR

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International Rectifier

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IRGS15B60KPBF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRGS15B60KPBF

Datasheet Details

Part number	IRGS15B60KPBF
Manufacturer	International Rectifier
File Size	283.69 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGS15B60KPBF Datasheet
Additional preview pages of the IRGS15B60KPBF datasheet.

Product details

Features

Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Lead-Free IRGS15B60KPbF C VCES = 600V IC = 15A, TC=100°C G E tsc > 10µs, TJ=150°C VCE(on) typ. = 1.8V n-channel Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. D2Pak IRGS15B60KPbF.

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Published: Mar 31, 2014 |