IRGS30B60KPBF Description
PD - 97003 INSULATED GATE BIPOLAR TRANSISTOR IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF.
IRGS30B60KPBF Key Features
- Low VCE (on) Non Punch Through IGBT Technology
- 10µs Short Circuit Capability
- Square RBSOA
- Positive VCE (on) Temperature Coefficient
- Maximum Junction Temperature rated at 175°C
- Lead-Free
- Benchmark Efficiency for Motor Control
- Rugged Transient Performance
- Low EMI
- Excellent Current Sharing in Parallel Operation