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IRGS30B60KPBF - Insulated Gate Bipolar Transistor

Product Overview

International Rectifier

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IRGS30B60KPBF Insulated Gate Bipolar Transistor by International Rectifier - Datasheet Preview — Datasheet preview – IRGS30B60KPBF

Datasheet Details

Part number	IRGS30B60KPBF
Manufacturer	International Rectifier
File Size	377.68 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGS30B60KPBF Datasheet
Additional preview pages of the IRGS30B60KPBF datasheet.

Product details

Features

Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature rated at 175°C.
Lead-Free C G E n-channel VCES = 600V IC = 50A, TC=100°C at TJ=175°C tsc > 10µs, TJ=150°C VCE(on) typ. = 1.95V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing.

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Published: Feb 16, 2016 |