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IRGS4630DPBF - Insulated Gate Bipolar Transistor

Features

  • G Gate C Collector Benefits E Emitter Low VCE(ON) and switching losses High efficiency in a wide range of.

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IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 30A, TC =100°C C CC C C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.
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