IRGS4630DPBF - Insulated Gate Bipolar Transistor

International Rectifier (now Infineon)

Key Features

G Gate C Collector Benefits E Emitter Low VCE(ON) and switching losses High efficiency in a wide range of.

IRGS4630DPBF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRGS4630DPBF
Manufacturer	International Rectifier (now Infineon)
File Size	1.20 MB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGS4630DPBF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 30A, TC =100°C C CC C C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.