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IRGS4630DPBF Datasheet | Specifications & PDF Download

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IRGS4630DPBF Insulated Gate Bipolar Transistor

IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insula.

Infineon

IRGS4630DPbF - IGBT

VCES = 600V IC = 30A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A Applications • Industrial Motor Drive • Inverters • UPS • W.
Rating: 1 (2 votes)
International Rectifier

IRGS4630DPBF - Insulated Gate Bipolar Transistor

IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 30A, TC =100°C C C.
Rating: 1 (1 votes)
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