IRGSL30B60K Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

Download the IRGSL30B60K datasheet PDF. This datasheet also includes the IRGB30B60K variant, as both parts are published together in a single manufacturer document.

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IRGSL30B60K insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IRGB30B60K_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IRGSL30B60K
Manufacturer	International Rectifier (now Infineon)
File Size	354.36 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGSL30B60K Datasheet

Overview

PD - 94799 INSULATED GATE BIPOLAR TRANSISTOR C IRGB30B60K IRGS30B60K IRGSL30B60K VCES = 600V IC = 50A, TC=100°C at.

Key Features

Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.95V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. TO-220AB IRGB30B60K www. DataShe.

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