Datasheet4U Logo Datasheet4U.com
International Rectifier (now Infineon) logo

IRGSL30B60KPbF

Manufacturer: International Rectifier (now Infineon)

This datasheet includes multiple variants, all published together in a single manufacturer document.

IRGSL30B60KPbF datasheet preview

Datasheet Details

Part number IRGSL30B60KPbF
Datasheet IRGSL30B60KPbF IRGS30B60KPBF Datasheet (PDF)
File Size 377.68 KB
Manufacturer International Rectifier (now Infineon)
Description Insulated Gate Bipolar Transistor
IRGSL30B60KPbF page 2 IRGSL30B60KPbF page 3

IRGSL30B60KPbF Overview

PD - 97003 INSULATED GATE BIPOLAR TRANSISTOR IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF.

IRGSL30B60KPbF Key Features

  • Low VCE (on) Non Punch Through IGBT Technology
  • 10µs Short Circuit Capability
  • Square RBSOA
  • Positive VCE (on) Temperature Coefficient
  • Maximum Junction Temperature rated at 175°C
  • Lead-Free
  • Benchmark Efficiency for Motor Control
  • Rugged Transient Performance
  • Low EMI
  • Excellent Current Sharing in Parallel Operation
International Rectifier (now Infineon) logo - Manufacturer

More Datasheets from International Rectifier (now Infineon)

See all International Rectifier (now Infineon) datasheets

Part Number Description
IRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR
IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR
IRGSL10B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGSL14C40L INSULATED GATE BIPOLAR TRANSISTOR
IRGSL14C40LPBF IGBT
IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR
IRGSL15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR
IRGSL4062DPBF Power MOSFET
IRGSL4B60KD1 INSULATED GATE BIPOLAR TRANSISTOR
IRGSL4B60KD1PbF Insulated Gate Bipolar Transistor

IRGSL30B60KPbF Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts