IRGSL30B60KPbF Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Download the IRGSL30B60KPbF datasheet PDF. This datasheet also includes the IRGS30B60KPBF variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

IRGSL30B60KPbF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IRGS30B60KPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IRGSL30B60KPbF
Manufacturer	International Rectifier (now Infineon)
File Size	377.68 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGSL30B60KPbF Datasheet

Overview

PD - 97003 INSULATED GATE BIPOLAR TRANSISTOR IRGB30B60KPbF IRGS30B60KPbF.

Key Features

Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature rated at 175°C.
Lead-Free C G E n-channel VCES = 600V IC = 50A, TC=100°C at TJ=175°C tsc > 10µs, TJ=150°C VCE(on) typ. = 1.95V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing.

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRGSL30B60K	INSULATED GATE BIPOLAR TRANSISTOR
IRGSL10B60KD	INSULATED GATE BIPOLAR TRANSISTOR
IRGSL10B60KDPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRGSL14C40L	INSULATED GATE BIPOLAR TRANSISTOR
IRGSL14C40LPBF	IGBT
IRGSL15B60KD	INSULATED GATE BIPOLAR TRANSISTOR
IRGSL15B60KDPbF	INSULATED GATE BIPOLAR TRANSISTOR
IRGSL4062DPBF	Power MOSFET
IRGSL4B60KD1	INSULATED GATE BIPOLAR TRANSISTOR
IRGSL4B60KD1PbF	Insulated Gate Bipolar Transistor