IRHF57230 Datasheet | International Rectifier

Description IR Hi Rel R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (Me V/(mg/cm2)). The bination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters. PD-93788B 200V, N-CHANNEL R5 TECHNOLOGY TO-39 Features - Single Event Effect (SEE) Hardened - Ultra Low RDS(on) - Neutron Tolerant - Identical Pre- and Post-Electrical Test Conditions - Repetitive Avalanche Ratings - Dynamic dv/dt Ratings - Simple Drive Requirements - Hermetically Sealed - ESD Rating: Class 1A per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter Value Pre-Irradiation Units ID1 @ VGS = 12V, TC = 25°C ID2 @ VGS = 12V, TC = 100°C IDM @ TC = 25°C PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt  Operating Junction and Storage Temperature Range Lead Temperature Weight 7.3 4.5 29 25 0.2 ± 20 110 7.3 2.5 7.0 -55 to + 150 300 (0.063 in. /1.6 mm from case for 10s) 0.98 (Typical) W W/°C V m J A m J V/ns °C g For Footnotes, refer to the page 2. 1 International Rectifier Hi Rel Products, Inc. 2018-12-04 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise...