n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear D.
Full PDF Text Transcription for IRHF57230SE (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRHF57230SE. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com PD - 93857B RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39) Product Summary Part Number IRHF57230SE Radiation Level 100K Rads (Si) RDS(on) 0.24Ω IR...
View more extracted text
art Number IRHF57230SE Radiation Level 100K Rads (Si) RDS(on) 0.24Ω IRHF57230SE JANSR2N7498T2 200V, N CHANNEL REF:MIL-PRF-19500/706 4 # c TECHNOLOGY ID QPL Part Number 7.0A JANSR2N7498T2 International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
More Datasheets from International Rectifier (now Infineon)
IRHF57230SE Datasheet
