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IRHLF730Z4 - N-CHANNEL POWER MOSFET

Download the IRHLF730Z4 datasheet PDF. This datasheet also covers the IRHLF770Z4 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

IRHLF770Z4 is part of the International Rectifier HiRel family of products.

IR HiRel R7 Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments.

Key Features

  • 5V CMOS and TTL Compatible.
  • Fast Switching.
  • Single Event Effect (SEE) Hardened.
  • Low Total Gate Charge.
  • Simple Drive Requirements.
  • Light Weight.
  • Complementary P-Channel Available - IRHLF7970Z4.
  • ESD Rating: Class 0 per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID @ VGS = 4.5V, TC = 25°C Continuous Drain Current ID @ VGS = 4.5V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissi.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHLF770Z4-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD-94695H IRHLF770Z4 2N7621T2 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE TO-205AF (TO-39) 60V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHLF770Z4 100 kRads(Si) IRHLF730Z4 300 kRads(Si) RDS(on) 0.65 0.65 ID 1.6A* 1.6A* Description IRHLF770Z4 is part of the International Rectifier HiRel family of products. IR HiRel R7 Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.