IRHLF77110 Datasheet | International Rectifier

Features : n n n n n n n n 5V CMOS and TTL patible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 4.5V, TC=25°C ID @ VGS = 4.5V, TC=100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 6.0 3.7 24 23 0.18 ±10 43 6.0 2.3 4.9 -55 to 150 Pre-Irradiation Units A W/°C V m J A m J V/ns °C 300 (0.063in/1.6mm from case for 10s) 0.98 (Typical) g .irf. 12/27/06 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS / ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min - - 1.0 - 3.0 - - - - - - - - - - - - Typ Max Units - 0.10 - - -5.7 - - - - - - - - - - - - 7.0 - - 0.30...