IRHLNJ77034 Datasheet | International Rectifier

Features : n n n n n n n n n n 5V CMOS and TTL patible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @VGS = 4.5V,TC = 25°C ID @VGS = 4.5V,TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight - Current is limited by package For footnotes refer to the last page 22- 20 88 57 0.45 ±10 63 22 5.7 8.8 -55 to 150 300 (for 5s) 1.0 (Typical) Pre-Irradiation Units W/°C V m J A m J V/ns °C g .irf. 05/06/08 .Data Sheet.in IRHLNJ77034, 2N7606U3 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS /∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min - - 1.0 - 24 - - - - - - - - - - - - - - - Typ Max Units - 0.068 - - -4.9 - - - - - - - - - -...