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IRHLNJ793034 - P-Channel MOSFET

Download the IRHLNJ793034 datasheet PDF. This datasheet also covers the IRHLNJ797034 variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

IR HiRel R7 Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments.

The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation.

Key Features

  • 5V CMOS and TTL Compatible.
  • Fast Switching.
  • Single Event Effect (SEE) Hardened.
  • Low Total Gate Charge.
  • Simple Drive Requirements.
  • Hermetically Sealed.
  • Ceramic Package.
  • Surface Mount.
  • Light Weight.
  • ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = -4.5V, TC = 25°C Continuous Drain Current ID2 @ VGS = -4.5V, TC = 100°C Continuous Drain Current IDM @ TC = 25°C Pulsed Drain Current  PD @.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHLNJ797034_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IRHLNJ793034 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRHLNJ793034. For precise diagrams, and layout, please refer to the original PDF.

PD-97302G IRHLNJ797034 JANSR2N7624U3 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, P-CHANNEL REF: MIL-PRF-19500/757 R7 TECHNOLOGY Product Summa...

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0.5) 60V, P-CHANNEL REF: MIL-PRF-19500/757 R7 TECHNOLOGY Product Summary Part Number Radiation Level IRHLNJ797034 100 kRads(Si) IRHLNJ793034 300 kRads(Si) RDS(on) ID 0.072 -22A* 0.072 -22A* QPL Part Number JANSR2N7624U3 JANSF2N7624U3 SMD-0.5 Description IR HiRel R7 Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout