IRHLNJ793034 Datasheet | International Rectifier

Description IR Hi Rel R7 Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. The device is ideal when used to interface directly with most logic gates, linear IC’s, micro-controllers, and other device types that operate from a 3.3-5V source. It may also be used to increase the output current of a PWM, voltage parator or an operational amplifier where the logic level drive signal is available. Features - 5V CMOS and TTL patible - Fast Switching - Single Event Effect (SEE) Hardened - Low Total Gate Charge - Simple Drive Requirements - Hermetically Sealed - Ceramic Package - Surface Mount - Light Weight - ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = -4.5V, TC = 25°C Continuous Drain Current ID2 @ VGS = -4.5V, TC = 100°C Continuous Drain Current IDM @ TC = 25°C Pulsed Drain Current  PD @ TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt  TJ TSTG Operating Junction and Storage Temperature Range Pckg. Mounting Surface Temp. Weight Value -22- -14.9 -88 57 0.45 ± 10 79 -22 5.7 -12.3 -55 to + 150 300 (for 5s) 1.0 (Typical) - Current is limited by package For Footnotes refer to the page 2. International Rectifier Hi Rel Products, Inc. Pre-Irradiation Units W W/°C V m J A m J V/ns °C...