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IRHM3130 - RADIATION HARDENED POWER MOSFET THRU-HOLE

Download the IRHM3130 datasheet PDF. This datasheet also covers the IRHM8130 variant, as both devices belong to the same radiation hardened power mosfet thru-hole family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanc.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHM8130_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.datasheet4u.com PD - 90707D RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) Product Summary Part Number Radiation Level IRHM7130 100K Rads (Si) IRHM3130 300K Rads (Si) IRHM4130 600K Rads (Si) IRHM8130 1000K Rads (Si) R DS(on) 0.18 Ω 0.18 Ω 0.18 Ω 0.18 Ω ID 14A 14A 14A 14A IRHM7130 100V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY ™ ® TO-254AA International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).