Datasheet4U Logo Datasheet4U.com

IRHM3260 - RADIATION HARDENED POWER MOSFET THRU-HOLE

Download the IRHM3260 datasheet PDF. This datasheet also covers the IRHM8260 variant, as both devices belong to the same radiation hardened power mosfet thru-hole family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanc.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHM8260_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.datasheet4u.com PD - 91332D RADIATION HARDENED POWER MOSFET THRU-HOLE ( T0-254AA) Product Summary Part Number IRHM7260 IRHM3260 IRHM4260 IRHM8260 Radiation Level R DS(on) 100K Rads (Si) 0.070Ω 300K Rads (Si) 0.070Ω 600K Rads (Si) 0.070Ω 1000K Rads (Si) 0.070Ω ID 35*A 35*A 35*A 35*A REF: MIL-PRF-19500/663 ® RAD Hard HEXFET TECHNOLOGY ™ IRHM7260 JANSR2N7433 200V, N-CHANNEL QPL Part Number JANSR2N7433 JANSF2N7433 JANSG2N7433 JANSH2N7433 TO-254AA International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).