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IRHM8360 Datasheet N-Channel Transistor

Manufacturer: International Rectifier (now Infineon)

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Overview

PD - 90823A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHM7360 IRHM8360 N CHANNEL MEGA RAD HARD 400Volt, 0.22Ω, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si).

Under identical pre- and post-irradiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose.

No compensation in gate drive circuitry is required.

Key Features

  • n Radiation Hardened up to 1 x 106 Rads (Si) n Single Event Burnout (SEB) Hardened n Single Event Gate Rupture (SEGR) Hardened n Gamma Dot (Flash X-Ray) Hardened n Neutron Tolerant n Identical Pre- and Post-Electrical Test Conditions n Repetitive Avalanche Rating n Dynamic dv/dt Rating n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Electrically Isolated n Ceramic Eyelets Pre-Irradiation ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS.

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IRHM8160 (IRHM7160 / IRHM8160) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
IRHM8230 (IRHM7230 / IRHM8230) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
IRHM8250 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM8260 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHM8450 REPETITIVE AVALANCHE AND dv/dt RATED
IRHM8Z60 RADIATION HARDENED POWER MOSFET THRU-HOLE