IRHM93150 Datasheet RADIATION HARDENED POWER MOSFET THRU-HOLE

Manufacturer: International Rectifier (now Infineon)

Overview: www.DataSheet4U.com PD - 90889D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number Radiation Level RDS(on) IRHM9150 100K Rads (Si) 0.080 Ω IRHM93150 300K Rads (Si) 0.080 Ω ID -22A -22A IRHM9150 JANSR2N7422 100V, P-CHANNEL REF: MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY ™ ® QPL Part Number JANSR2N7422 JANSF2N7422 International Rectifier’s RADHard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.

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IRHM93150 radiation hardened power mosfet thru-hole by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRHM93150
Manufacturer	International Rectifier (now Infineon)
File Size	164.32 KB
Description	RADIATION HARDENED POWER MOSFET THRU-HOLE
Download	IRHM93150 Download (PDF)

Key Features

n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage S.

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